Robust Magnetoelectric Effect in the Decorated Graphene/In₂Se₃ Heterostructure

The magnetoelectric effect is a fundamental physical phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as key foundation the emerging field spintronics. Here, we show by first-principles studies ferroelectric (FE) polarization an In2Se3 monolayer can modulate magnetism adjacent transition-metal (TM)-decorated graphene layer via ferroelectrically induced electronic transition. TM nonbonding d-orbital shifts downward hybridizes with carbon-p states near Fermi level, suppressing moment, under one FE polarization, but on reversed this moves upward, restoring original moment. This finding robust in TM-decorated graphene/In2Se3 heterostructure offers powerful insights promising avenue for experimental exploration controlled two-dimensional (2D) materials.